Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP181 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Typ.
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE .
BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
3 | BFP180W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
4 | BFP181R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP181R |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
6 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
7 | BFP181TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
8 | BFP181TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
9 | BFP181W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
10 | BFP181W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
11 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP182 |
Infineon Technologies AG |
NPN Silicon RF Transistor |