BFP 180W NPN Silicon RF Transistor For low-power amplifier in mobile 3 4 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 180W Maximum Ratings Parameter Marking RDs 1=E Pin Configuration 2=C 3.
llector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f.
BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
3 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
4 | BFP181R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
5 | BFP181R |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
6 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
7 | BFP181TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
8 | BFP181TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
9 | BFP181W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
10 | BFP181W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
11 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP182 |
Infineon Technologies AG |
NPN Silicon RF Transistor |