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BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maxim.
Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 8 100 - V µA 100 nA 100 µA 1 30 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V Semiconductor Group 2 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 5 7 0.19 0.27 0.13 - GHz pF 0.3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BFP180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
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| 2 | BFP180W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 3 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 4 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
|
| 5 | BFP181R |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 6 | BFP181R |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 7 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 8 | BFP181TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 9 | BFP181TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor |
|
| 10 | BFP181W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 11 | BFP181W |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 12 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|