BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 181R RFs Q62702-F1685 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Par.
DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Jan-21-1997 BFP 181R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.21 0.27 0.32 - GHz pF 0.4 dB 1.45 1.
BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFP181 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
2 | BFP181 |
Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor | |
3 | BFP181T |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
4 | BFP181TRW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
5 | BFP181TW |
Vishay Telefunken |
Silicon NPN Planar RF Transistor | |
6 | BFP181W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
7 | BFP181W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
8 | BFP180 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
9 | BFP180W |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
10 | BFP180W |
Infineon Technologies AG |
NPN Silicon RF Transistor | |
11 | BFP182 |
Siemens Semiconductor Group |
NPN Silicon RF Transistor | |
12 | BFP182 |
Infineon Technologies AG |
NPN Silicon RF Transistor |