BCR08PN - Siemens Semiconductor Group

BCR08PN NPN/PNP Silicon Digital Tansistor

BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation Type BCR 08PN Marking Ordering Code Pin Configuration WFs Package Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2.

Features

tics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 2.2 0.047 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 0.5 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics for NP.