MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 • • • • IT (RMS) ..
M I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Ta=40° C V4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
3.9±0.3
Ratings 0.8 8 0.26 1 0.1 6 1
–40 ~ +125
–40 ~ +125 48
Unit A A A2s W W V A °C °C mg
V1. Gate open.
Feb.1999
MITSUBISH.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR08AS-12 |
Renesas Technology |
TRIAC | |
2 | BCR08AS |
Mitsubishi |
TRIAC | |
3 | BCR08AM |
RENESAS |
Triac | |
4 | BCR08AM-12 |
Renesas Technology |
Triac | |
5 | BCR08AM-14 |
Mitsubishi Electric Semiconductor |
Triac | |
6 | BCR08AM-14A |
Renesas Technology |
Triac | |
7 | BCR08PN |
Siemens Semiconductor Group |
NPN/PNP Silicon Digital Tansistor | |
8 | BCR08PN |
Infineon Technologies AG |
NPN/PNP Silicon Digital Transistor Array | |
9 | BCR-122JL |
Coilcraft |
SMT Broadband Conical Inductors | |
10 | BCR-162JL |
Coilcraft |
SMT Broadband Conical Inductors | |
11 | BCR-221JL |
Coilcraft |
SMT Broadband Conical Inductors | |
12 | BCR-232JL |
Coilcraft |
SMT Broadband Conical Inductors |