BCR08AM - RENESAS

BCR08AM Triac

BCR08AM MITMSIUTBSIUSBHIISSHEI MSEICMOICNODUNCDTUOCRTOAC> BCR0BC8RA0M8AM LOWLOPWOWPOEWR EURSEUSE PLAPNLAARNAPARSPSAIVSASTIVIOATNIOTYNPTEYPE OUTLINE DRAWING Dimensions in mm φ5.0 MAX. 5.0 MAX. 12.5 MIN. ➁ ➂ ➀ VOLTAGE CLASS TYPE NAME ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7 1.25 1.25 • IT (RMS) ..............

Features

rage gate power dissipation VGM Peak gate voltage IGM Peak gate current Tj Junction temperature Tstg Storage temperature — Weight ✽1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction, Tc=56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit V V Ratings Unit 0.8 A 8 A 0.26 A2s 1 W 0.1 W 6 V 0.5 A
  –40 ~ +125 °C
  –40 ~ +125 °C 0.23 g Mar. 2002 MITSUBISHI SEMICONDUCTOR BCR08AM LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARAC.