BCR08PN |
Part Number | BCR08PN |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Buil... |
Features |
40
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR08PN
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor... |
Document |
BCR08PN Data Sheet
PDF 52.82KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BCR08PN |
Siemens Semiconductor Group |
NPN/PNP Silicon Digital Tansistor | |
2 | BCR08AM |
RENESAS |
Triac | |
3 | BCR08AM-12 |
Renesas Technology |
Triac | |
4 | BCR08AM-14 |
Mitsubishi Electric Semiconductor |
Triac | |
5 | BCR08AM-14A |
Renesas Technology |
Triac |