BCR08AM-14 - Mitsubishi Electric Semiconductor

BCR08AM-14 Triac

MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING φ 5.0 MAX. Dimensions in mm 4.4  Ž VOLTAGE CLASS TYPE NAME Œ T1 TERMINAL  T2 TERMINAL Ž GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7 1.25 1.25 1.3 12.5 MIN. Œ 5.0 MAX. 3.9 MAX. Œ Ž  ...........

Features

tate current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 ° conduction, Tc=67°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.8 8 0.26 1 0.1 6 1
  –40 ~ +125
  –40 ~ +125 0.23 Unit A A A2s W W V A °C °C g Feb.1999 V1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR08AM-14 LOW POWER USE PLANAR PASSIVAT.