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BCR08AS-8 |
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| Part Number | BCR08AS-8 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN... |
| Features |
M I2t PGM PG (AV) VGM IGM Tj Tstg —
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Ta=40° C V4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
3.9±0.3
Ratings 0.8 8 0.26 1 0.1 6 1 –40 ~ +125 –40 ~ +125 48 Unit A A A2s W W V A °C °C mg V1. Gate open. Feb.1999 MITSUBISH... |
| Document |
 BCR08AS-8 Data Sheet
PDF 101.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BCR08AS-12 |
Renesas Technology |
TRIAC |
|
| 2 | BCR08AS |
Mitsubishi |
TRIAC |
|
| 3 | BCR08AM |
RENESAS |
Triac |
|
| 4 | BCR08AM-12 |
Renesas Technology |
Triac |
|
| 5 | BCR08AM-14 |
Mitsubishi Electric Semiconductor |
Triac |
|