BB304M - Hitachi

BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C (Z) 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply v.

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range; Applicable with 5V to 9V supply voltage.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “DW
  –”. 2. BB304M is individual type number of HITACHI BBFET. BB304M Absolute Maximum Ratings (Ta = 25°C) Item Dr.