BB305C - Hitachi

BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. • Withstand.

Features

•
•
•
• Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5 V to 9 V supply voltage.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “EW
  –”. 2. BB305C is individual type number of HITACHI BBFET. BB305C Absolute Maximum Ratings (Ta = 25°C) Item Drain to .