BB302C - Hitachi

BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Pro.

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain
• Note 1 Marking is “BW
  –”.
• Note 2 BB302C is individual type number of HITACHI BBFET. BB302C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10
  –0 Gate2 .