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BB304M |
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| Part Number | BB304M |
| Manufacturer | Hitachi |
| Description | BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C (Z) 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain... |
| Features |
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is “DW –”. 2. BB304M is individual type number of HITACHI BBFET. BB304M Absolute Maximum Ratings (Ta = 25°C) Item Dr... |
| Document |
 BB304M Data Sheet
PDF 68.49KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BB304 |
Telefunken |
Silicon Epitaxial Planar Dual Capacitance Diodes |
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| 2 | BB304A |
Siemens Group |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
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| 3 | BB304C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 4 | BB301 |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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| 5 | BB301 |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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