BB304C - Hitachi

BB304C Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C (Z) 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply v.

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; (PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range; Applicable with 5V to 9V supply voltage.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1 Marking is “DW
  –”. 2. BB304C is individual type number of HITACHI BBFET. BB304C Absolute Maximum Ratings (Ta = 25°C) Item.