BAT62-03W - Siemens Semiconductor Group

BAT62-03W Silicon Schottky Diode

BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1028 Pin Configuration 1=A 2=C Package SOD-323 BAT 62-03W L Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temp.

Features

pacitance CC - f = 1 MHz Differential resistance R0 - kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Ls Semiconductor Group 2 Mar-07-1996 BAT 62-03W Forward current IF = f (VF) TA = parameter Leakage current IR = f (VR) TA = Parameter 10 4 10 3 uA uA IF 10 3 IR TA = 25°C TA = 85°C TA = 125°C TA = -40°C 10 2 TA = 125°C TA = 85°C 10 1 10 2 10 0 TA = 25°C 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V VF 2.0 10 -1 0 5 10 15 20 25 30 V VR 40 Diode capacitance CT = f (VR) f = 1MHz Rectifier voltage V0 = f (Vi) f = 900MHz RL = parameter in Ω 10 4 mV 10 3 0.