BAT62-09S - Infineon Technologies AG

BAT62-09S Silicon Schottky Diode

Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free (RoHS compliant) package BAT62... BAT62 "! , ,  BAT62-09S $# " , , ! BAT62-03W BAT62-02V BAT62-02W  BAT62-07W "! , ,  BAT62-02L BAT62-02LS 12 BAT62-07L4 4 D1 1 3 D2 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Typ.

Features

02L, -07L4, -03W, TS ≤ 108 °C BAT62-02W, -02V, TS ≤ 109 °C BAT62-07W, TS ≤ 103 °C BAT62-09S, TS ≤ 105 °C VR IF Ptot Junction temperature Storage temperature Tj Tstg Thermal Resistance Parameter Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W, 02V BAT62-07W BAT62-09S Symbol RthJS Value 40 20 100 100 100 100 100 150 -55 ... 150 Value ≤ 650 ≤ 420 ≤ 410 ≤ 470 ≤ tbd Unit V mA °C Unit Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 40 V Forward voltage IF = 2 mA.