BAT62-07W - Siemens Semiconductor Group

BAT62-07W Silicon Schottky Diode

BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-07W Marking Ordering Code 62s Q62702-A1198 Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward curre.

Features

= 0 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 62-07W Forward current IF = f (TA
*;TS)
* mounted on alumina Forward current IF = f (VF ) TA = parameter 10 4 25 uA mA TA IF 15 TS 10 3 T A = 25°C T A = 85°C T A = 125°C T A = -40°C 10 10 2 5 IF 120 °C 10 1 0.0 0 0 20 40 60 80 100 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 1.9 TA,TS VF Permissible Pulse Load Permissiple pulse load IFmax/IFDC = f(tp) I Fmax / I FDC = f(t.