BAT62-02W - Siemens Semiconductor Group

BAT62-02W Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)

BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-02W Marking Ordering Code L Q62702-A1028 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temper.

Features

Hz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (TA
*;TS)
* Package mounted on epoxy 50 mA IF TA 30 TS 20 10 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W RthJS IFmax / IFDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 s 10 0 1.