Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
BAT62-03W |
Click to view a larger image
| Part Number | BAT62-03W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q6270... |
| Features |
pacitance
CC
-
f = 1 MHz
Differential resistance
R0
-
kΩ nH
VR = 0 , f = 10 kHz
Series inductance chip to ground
Ls
Semiconductor Group
2
Mar-07-1996
BAT 62-03W
Forward current IF = f (VF) TA = parameter
Leakage current IR = f (VR) TA = Parameter
10 4
10 3 uA
uA
IF
10 3
IR TA = 25°C TA = 85°C TA = 125°C TA = -40°C
10 2
TA = 125°C
TA = 85°C 10
1
10 2 10 0 TA = 25°C
10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V VF
2.0
10 -1 0
5
10
15
20
25
30
V VR
40
Diode capacitance CT = f (VR) f = 1MHz
Rectifier voltage V0 = f (Vi) f = 900MHz RL = parameter in Ω
10 4 mV 10 3
0... |
| Document |
 BAT62-03W Data Sheet
PDF 39.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAT62-03W |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 2 | BAT62-02L |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 3 | BAT62-02LS |
Infineon |
Silicon Schottky Diode |
|
| 4 | BAT62-02V |
Infineon |
Silicon Schottky Diode |
|
| 5 | BAT62-02W |
Siemens Semiconductor Group |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
|