AT28HC256N - ATMEL Corporation

AT28HC256N High-speed Parallel EEPROM

The AT28HC256N is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers access times to 90 ns with power dissipation of just 440 mW. When the AT28HC256N is deselected, the standby current is le.

Features

• Fast Read Access Time
  – 90 ns
• Automatic Page Write Operation
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  – Internal Address and Data Latches for 64 Bytes
  – Internal Control Timer Fast Write Cycle Times
  – Page Write Cycle Time: 3 ms Maximum
  – 1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology
  – Endurance: 105 Cycles
  – Data Retention: 10 Years Single 5V ±10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout 256 (32K x 8) High-speed Parallel E.