AP6618GM-HF - Advanced Power Electronics

AP6618GM-HF POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Cur.

Features

e without notice Free Datasheet http://www.datasheet4u.com/ AP6618GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min. 30 1 - Typ. 23.1 38.5 13 8.4 2.1 4.7 6 5.2 18.8 4.4 645 150 95 Max. Units 30 50 3 1 25 +100 13 800 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF.