AP6618GM-HF-3 - Advanced Power Electronics

AP6618GM-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP6618GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 S S .

Features

-55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6618GM-HF-3TR RoHS-compliant SO-8, shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201004132-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 AP6618GM-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=7A VGS=4.5V, ID=5A Min. 30 1 - .