AP6677GH - Advanced Power Electronics

AP6677GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum .

Features

Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.8 62.5 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200901221 Free Datasheet http://www.datasheet4u.com/ AP6677GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Volt.