AP6679BGH-HF - Advanced Power Electronics

AP6679BGH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP667.

Features

150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.3 62.5 110 Units ℃/W ℃/W ℃/W 1 201004142 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP6679BGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown .