AP6679BGI-HF - Advanced Power Electronics

AP6679BGI-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID.

Features

Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Units ℃/W ℃/W 1 201203091 Free Datasheet http://www.datasheet4u.com/ Data and specifications subject to change without notice AP6679BGI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-20A Min. -30 -1 - Typ. 60 44 6.5 28.5 11 67 37 22 520 495 2 Max. Units 9 15 -3.