AP09N90W-HF - Advanced Power Electronics

AP09N90W-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-3P package is widely preferred for commercial-industrial surface mount applications a.

Features

near Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range 900 +30 8.6 5 30 240 1.92 18 -55 to 150 -55 to 150 V V A A A W W/℃ mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 0.52 40 Units ℃/W ℃/W 1 201501124 AP09N90W-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Q.