AP09N90CW - Advanced Power Electronics

AP09N90CW N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most safety specifications. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@T.

Features

55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.60 40 Unit ℃/W ℃/W Data & specifications subject to change without notice 200731031 Free Datasheet http://www.datasheet4u.com/ AP09N90CW Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 900 2 - Typ. 0.74 1.25 3.6 50.7 12 16 20 16 65 27 3097 516 19 Max. Units 1.4 4 10 100 ±100 80 5000 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns.