AP09N90W-HF |
Part Number | AP09N90W-HF |
Manufacturer | Advanced Power Electronics |
Description | AP09N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extr... |
Features |
near Derating Factor Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range
900 +30 8.6
5 30 240 1.92 18 -55 to 150 -55 to 150
V V A A A W W/℃ mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 0.52
40
Units ℃/W ℃/W
1 201501124
AP09N90W-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON) VGS(th) gfs IDSS
IGSS Q... |
Document |
AP09N90W-HF Data Sheet
PDF 95.30KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP09N90W |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP09N90CW |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP09N90CW-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP09N90CW-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP09N20BGH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |