AP09N20BGS-HF - Advanced Power Electronics

AP09N20BGS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercialindustrial surface mount applicati.

Features

Rating 200 +20 7.8 5 20 69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.8 40 Unit ℃/W ℃/W 1 201308131 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N20BGS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf.