AP09N20BGI-HF - Advanced Power Electronics

AP09N20BGI-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM P.

Features

Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201011081 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N20BGI-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate.