AON6516 - Alpha & Omega Semiconductors

AON6516 N-Channel MOSFET

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 5mΩ < 8mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telec.

Features

Maximum Junction-to-Case C Maximum 30 ±20 32 25 127 27 22 34 29 36 25 10 6 3.8 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 44 3.5 Max 21 53 5 Units ° C/W ° C/W ° C/W Rev0: Sep 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6516 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(O.