AON6500 - Alpha & Omega Semiconductors

AON6500 N-Channel MOSFET

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 370A < 0.95mW < 1.3mW Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters .

Features

ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG Maximum 30 ±20 370 230 800 71 57 50 125 36 208 83 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State Symbol RqJA RqJC Typ 14 40 0.46 Max 17 55 0.6 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 2.0: March 2022 www.aosmd.com Page 1 of 6 AON6500 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltag.