AON6524 - Alpha & Omega Semiconductors

AON6524 N-Channel MOSFET

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 68A < 5.0mΩ < 8.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in T.

Features

A=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 40 2.9 Max 22 55 3.5 Units ° C/W ° C/W ° C/W Rev0: Sep 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6524 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, ID=.