AON6512 - Alpha & Omega Semiconductors

AON6512 N-Channel MOSFET

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 1.

Features

Range TJ, TSTG Maximum 30 ±20 210 130 450 54 43 70 123 36 118 45 7.4 4.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 0.8 Max 17 55 1.05 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.2.0: April 2022 www.aosmd.com Page 1 of 6 AON6512 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30.