AON6522 - Alpha & Omega Semiconductors

AON6522 N-Channel MOSFET

• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 25V 200A < 0.95mΩ < 1.3mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in.

Features

° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.1mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: Jan 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6522 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=25V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V,.