AOD418 - Alpha & Omega Semiconductors

AOD418 30V N-Channel MOSFET

The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary VDS ID (at VGS= 10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.5mΩ < 11mΩ 100%.

Features

A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 2.5 Max 20 50 3 Units °C/W °C/W °C/W Rev 0: February 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD418/AOI418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V.