AOD4120 - Alpha & Omega Semiconductors

AOD4120 N-Channel MOSFET

The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identi.

Features

1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested D Top View Drain Connected to Tab G S G www.DataSheet4U.com D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 20 ±16 25 23 75 13 25 33 16.7 2.5 1.7 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG Repetitive avalanche energy L=0..