AOD4102 - Alpha & Omega Semiconductors

AOD4102 30V N-Channel MOSFET

The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 19A < 37mΩ < 64mΩ 100% UIS Tested 100% Rg Tested Top View D TO-252 D.

Features

ction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 20 50 4.5 Max 30 60 7 Units ° C/W ° C/W ° C/W Rev 0: January 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD4102/AOI4102 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A T0252 VGS=4.5V, ID=7A TO252 .