AOD4100 - Alpha & Omega Semiconductors

AOD4100 N-Channel MOSFET

The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m Ω (VGS = 20V) RDS(ON) < 9m Ω (VGS = 12V) RDS(ON) <.

Features

VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m Ω (VGS = 20V) RDS(ON) < 9m Ω (VGS = 12V) RDS(ON) < 12m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current C Maximum 25 ±30 50 49 120 28 118 50 25 6.5 4.2 -55 to 175 Units V V A A mJ W W °C Max 19 52 3 Units °C/W °C/W °C/W VGS TC=25°C G TC=100°C ID IDM IAR EAR PD PDSM Repetitive avalanche energy L=0.3mH C T.