AOD4112 - Alpha & Omega Semiconductors

AOD4112 N-Channel MOSFET

SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4112 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V I.

Features

VDS (V) = 30V ID = 20A (V GS = 10V) RDS(ON) < 9.5m Ω (VGS = 10V) RDS(ON) < 14.5m Ω (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested! TO-252 D-PAK Top View Drain Connected to G Tab S G D S D Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current GF Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 20 20 80 25 94 50 25 5.7 3.6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche .