www.DataSheet4U.com provide Features VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specificatio.
VDS (V) = 30V ID = 3.1 A (VGS = 10V) RDS(ON) < 77mΩ (VGS = 10V) RDS(ON) < 120mΩ (VGS = 4.5V) The AO6810 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). TSOP6 Top View G1 S2 G2 D1 S1 D2 D1 D2 1 6 2 5 3 4 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AO6800 |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET | |
2 | AO6800 |
VBsemi |
Dual N-Channel MOSFET | |
3 | AO6800-HF |
Kexin |
Dual N-Channel MOSFET | |
4 | AO6801 |
Alpha & Omega Semiconductors |
Dual P-Channel MOSFET | |
5 | AO6801A |
Kexin |
Dual P-Channel MOSFET | |
6 | AO6801A |
Alpha & Omega Semiconductors |
30V Dual P-Channel MOSFET | |
7 | AO6802 |
Alpha & Omega Semiconductors |
30V Dual N-Channel MOSFET | |
8 | AO6804 |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET | |
9 | AO6804A |
Kexin |
Dual N-Channel MOSFET | |
10 | AO6804A |
Alpha & Omega Semiconductors |
20V Dual N-Channel MOSFET | |
11 | AO6808 |
Alpha & Omega Semiconductors |
Dual N-Channel MOSFET | |
12 | AO6400 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |