AO6808 - Alpha & Omega Semiconductors

AO6808 Dual N-Channel MOSFET

The AO6808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Product Summary VDS = 20V ID = 6A RDS(ON) = 19mΩ (typical) RDS(ON) = 20mΩ (typical) RDS(ON) = 21mΩ (typical) RDS(ON) = 23mΩ (typical) (VGS = 4.5V) (.

Features

tate Steady State Symbol RθJA RθJL 10 Sec Steady State 20 ±12 6 4.6 4.6 3.7 60 1.3 0.8 0.8 0.5 -55 to 150 Typ Max 76 95 118 150 54 68 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 20 V IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V TJ = 55°C 1 µA 5 IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current.