AO6800 - Alpha & Omega Semiconductors

AO6800 30V Dual N-Channel MOSFET

Product Summary The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 3.4A < 60mW < 70mW < 90mW TSOP6 T.

Features

Junction-to-Lead Steady-State RqJL 64 Max 110 150 80 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 www.aosmd.com Page 1 of 5 AO6800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±12V VDS=VGS ID=250mA VGS=10V, VDS=5V VGS=10V, ID=3.4A RDS(ON) gFS VSD IS Static Drain-Sourc.