AO6802 - Alpha & Omega Semiconductors

AO6802 30V Dual N-Channel MOSFET

The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 3.5A < 50mΩ < 70mΩ TSOP6 D1 Top View Bottom View Top View G1 1 S2 2 6 D1 5 S1 G2 3 4 D2 G1 G2 Pi.

Features

Units °C/W °C/W °C/W Rev 2: Mar 2011 www.aosmd.com Page 1 of 5 AO6802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 2 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 20 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A TJ=125°C 40 .