Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IGBT for Automotive Applications 650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Po.
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
Typical Applications
• E−compressor for HEV/EV
• PTC Heater for HEV/EV
DATA SHEET www.onsemi.com
BVCES 650 V
VCE(sat) TYP 1.55 V
C
IC 40 A
G
E
C G
E D2PAK 3 LEAD
CASE 418AJ
MARKING DIAGRAM
&Y&Z&3&K AFGB40 T65RQDN
&Y
= Logo
&Z
= Assem.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGB40T65SQDN |
ON Semiconductor |
IGBT |
|
| 2 | AFGB20N60SFD-BW |
ON Semiconductor |
IGBT |
|
| 3 | AFGB30T65RQDN |
ON Semiconductor |
IGBT |
|
| 4 | AFGB30T65SQDN |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL40T65RQDN |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 12 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|