AFGB40T65RQDN ON Semiconductor IGBT Datasheet, en stock, prix

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AFGB40T65RQDN

ON Semiconductor
AFGB40T65RQDN
AFGB40T65RQDN AFGB40T65RQDN
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Part Number AFGB40T65RQDN
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description IGBT for Automotive Applications 650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This tech...
Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant Typical Applications
• E−compressor for HEV/EV
• PTC Heater for HEV/EV DATA SHEET www.onsemi.com BVCES 650 V VCE(sat) TYP 1.55 V C IC 40 A G E C G E D2PAK 3 LEAD CASE 418AJ MARKING DIAGRAM &Y&Z&3&K AFGB40 T65RQDN &Y = Logo &Z = Assem...

Document Datasheet AFGB40T65RQDN Data Sheet
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