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IGBT for Automotive Application 650 V, 40 A AFGHL40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Po.
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
Typical Applications
• E−compressor for HEV/EV, PTC heater for HEV/EV
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage
VCES
650
V
VGES
±20
V
±30
Collec.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 2 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 3 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|
| 4 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL50T65RQDN |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL50T65SQ |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL50T65SQD |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL50T65SQDC |
ON Semiconductor |
Hybrid IGBT |
|
| 12 | AFGHL75T65SQ |
ON Semiconductor |
IGBT |
|