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AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of the Part are Dynamically Tested (Note 1) • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charge.
• Maximum Junction Temperature: TJ = 175°C
• High Speed Switching Series
• VCE(sat) = 1.6 V (Typ.) @ IC = 40 A
• 100% of the Part are Dynamically Tested (Note 1)
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Collector to Emitter Voltage
VCES
650
V
Gate-to-Emitter Voltage
VGES
±20
V
Transient Gate-to-Emitter Voltage
VGES
±30
V
Collector Current − TC = 25°C
IC
80
A
Collector.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGB40T65RQDN |
ON Semiconductor |
IGBT |
|
| 2 | AFGB20N60SFD-BW |
ON Semiconductor |
IGBT |
|
| 3 | AFGB30T65RQDN |
ON Semiconductor |
IGBT |
|
| 4 | AFGB30T65SQDN |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL40T65RQDN |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 12 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|