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Using novel field−stop IGBT technology, ON Semiconductor’s new series of field−stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Swi.
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching
• AEC−Q101 Qualified to Automotive Requirements
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers, Converters, High Voltage Auxiliaries
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 1)
Diode Forward Current (TC = 25.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AFGB30T65RQDN |
ON Semiconductor |
IGBT |
|
| 2 | AFGB30T65SQDN |
ON Semiconductor |
IGBT |
|
| 3 | AFGB40T65RQDN |
ON Semiconductor |
IGBT |
|
| 4 | AFGB40T65SQDN |
ON Semiconductor |
IGBT |
|
| 5 | AFGHL25T120RHD |
ON Semiconductor |
IGBT |
|
| 6 | AFGHL25T120RLD |
ON Semiconductor |
IGBT |
|
| 7 | AFGHL30T65RQDN |
ON Semiconductor |
IGBT |
|
| 8 | AFGHL40T120RHD |
ON Semiconductor |
IGBT |
|
| 9 | AFGHL40T65RQDN |
ON Semiconductor |
IGBT |
|
| 10 | AFGHL40T65SPD |
ON Semiconductor |
IGBT |
|
| 11 | AFGHL40T65SQ |
ON Semiconductor |
IGBT |
|
| 12 | AFGHL40T65SQD |
ON Semiconductor |
IGBT |
|